This item is in: Materials > Electronic and optical materials > Optical materials, photonics and lasers
In situ characterization of thin film growthEdited by G Koster and G Rijnders, University of Twente, Netherlands
Woodhead Publishing Series in Electronic and Optical Materials No. 22
- chapters review electron diffraction techniques, including the methodology for observations and measurements
- discusses the principles and applications of photoemission techniques
- examines alternative in situ characterisation techniques
- a standard reference for materials scientists and engineers in the electronics and photonics industries
Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research.
Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth.
With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area.
ISBN 1 84569 934 3
ISBN-13: 978 1 84569 934 5
October 2011
296 pages 234 x 156mm hardback
£130.00 / US$220.00 / €155.00
Usually dispatched within 24 hours
About the editors
Gertjan Koster is Associate Professor and Guus Rijnders is Chairman of Inorganic Materials Science at the University of Twente, The Netherlands.
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Contents
PART 1 ELECTRON DIFFRACTION TECHNIQUES FOR STUDYING THIN FILM GROWTH IN SITU
PART 2 PHOTOEMISSION TECHNIQUES FOR STUDYING THIN FILM GROWTH IN SITU
PART 3 ALTERNATIVE IN SITU CHARACTERISATION TECHNIQUES
PART 1 ELECTRON DIFFRACTION TECHNIQUES FOR STUDYING THIN FILM GROWTH IN SITU
Reflection high-energy electron diffraction (RHEED) for in situ characterisation of thin film growth
G Koster, University of Twente, The Netherlands
- Reflection high-energy electron diffraction (RHEED) and pulsed laser deposition
- Basic principles of RHEED
- Analysis of typical RHEED patterns: the influence of surface disorder
- Crystal growth: Kinetics vs thermodynamics
- Variations of the specular intensity during deposition
- Kinetical growth modes and the intensity response in RHEED
- RHEED intensity variations and Monte Carlo simulations
- Conclusions
- Acknowledgements
- References
Inelastic scattering techniques for in situ characterisation of thin film growth: backscatter Kikuchi diffraction
N J C Ingle, University of British Columbia, Canada
- Introduction
- Kikuchi patterns
- Kikuchi lines in reflection high-energy electron diffraction (RHEED) images
- Dual-screen RHEED and Kikuchi pattern collection
- Lattice parameter determination
- Epitaxial film structure determination
- Kinematic and dynamic scattering
- Epitaxial film structure determination
- Conclusion
- Bibliography
PART 2 PHOTOEMISSION TECHNIQUES FOR STUDYING THIN FILM GROWTH IN SITU
Ultraviolet photoemission spectroscopy (UPS) for in situ characterization of thin film growth
K M Shen, Cornell University, USA
- Introduction
- Principles of ultraviolet photoemission spectroscopy (UPS)
- Applications of UPS to thin film systems
- Future trends
- References
X-ray photoelectron spectroscopy (XPS) for in situ characterization of thin film growth
H Bluhm, Lawrence Berkeley National Laboratory, USA
- Introduction
- In situ monitoring of thin film growth
- Measuring the reaction of thin films with gases using ambient pressure X-ray photoelectron spectroscopy (XPS)
- In situ measurements of buried interfaces using high kinetic energy XPS (HAXPES)
- Conclusions
- Acknowledgements
- References
In situ spectroscopic ellipsometry (SE) for characterization of thin film growth
J N Hilfiker, J A Woollam Co, Inc, USA
- Introduction
- Principles of ellipsometry
- In situ spectroscopic ellipsometry (SE) characterization
- In situ considerations
- Further in situ SE examples
- Conclusions
- Acknowledgements
- References
PART 3 ALTERNATIVE IN SITU CHARACTERISATION TECHNIQUES
In situ ion beam surface characterization of thin multicomponent films
L V Goncharova, The University of Western Ontario, Canada
- Introduction
- Background to ion backscattering spectrometry and time-of-flight ion scattering and recoil methods
- Experimental setups
- Studies of film growth processes relevant to multicomponent oxides
- Conclusions
- Acknowledgements
- References
Spectroscopies combined with (RHEED) for real time in situ surface monitoring of thin film growth
P Staib, Staib Instruments, Inc, USA
- Introduction
- Overview of processes and excitations by primary electrons in the surface
- Recombination and emission processes
- Descriptions and results of in situ spectroscopies combined with reflection high-energy electron diffraction (RHEED)
- Conclusion and future trends
- References
In situ deposition vapor monitoring
V Matias, Los Alamos National Laboratory, USA; and R H Hammond, Stanford University, USA
- Introduction
- Overview of vapor flux monitoring
- Quartz crystal microbalance
- Vapor ionization techniques
- Optical absorption spectroscopy techniques
- Summary of techniques and resources
- Case studies
- Conclusions
- Acknowledgements
- References
Real-time studies of epitaxial film growth using surface x-ray diffraction (SXRD)
G Eres, J Z Tischler, C M Rouleau, B C Larson and H M Christen, Oak Ridge National Laboratory, USA; and P Zschack, Argonne National Laboratory, USA
- Introduction
- Growth kinetics studies of pulsed laser deposition using surface X-ray diffraction
- Real-time surface x-ray diffraction (SXRD) in SrTiOpulsed laser deposition: an experimental case study
- Future trends
- Acknowledgement
- References